Publications
1. Far-Infrared Absorption in CdMnSe: New Impurity Band Effects. Physical Review (Rapid Communication) B 30, 6221-6223 (1984) V.J.Goldman and H.D.Drew
2. Far-Infrared Spectroscopy of Semimagnetic Semiconductors. Solid State Communications 53, 1148-1149 (1985) V.J.Goldman and H.D.Drew
3. Impurity Band Effects in Diluted Magnetic Semiconductors Proc. 17th Intl. Conf. Phys. of Semicond. (1984) Springer-Verlag, New York, pp. 1427-1430 V.J.Goldman and H.D.Drew
4. Cyclotron Resonance of Localized Electrons in n-CdMnSe Physical Review (Rapid Communication) B 32, 5543-5546 (1985) V.J.Goldman and H.D.Drew
5. Magnetic-Field-Induced Localization in InSb and HgCdTe Physical Review (Rapid Communication) B 32, 6952-6955 (1985) M.Shayegan, V.J.Goldman, H.D.Drew, D.A.Nelson and P.M.Tedrow
6. Observation of Impurity Cyclotron Resonance in HgCdTe 
Physical
Review Letters 56, 968-971 (1985)
V.J.Goldman, H.D.Drew, M.Shayegan and D.A.Nelson
7.Anomalous Hall Effect Below the Magnetic-Field-Induced
Metal-Insulator Transition in Narrow-Gap Semiconductors
Physical
Review Letters 57, 1056-1059 (1986)
V.J.Goldman, M.Shayegan and H.D.Drew
8. Magnetic-Field-Induced Metal-Insulator Transition in Narrow-Gap Semiconductors Proc. 18th Intl. Conf. Phys. Semicond. (1986), World Scientific, pp. 1205-1208 M.Shayegan, V.J.Goldman and H.D.Drew
9. Magnetic-Field-Induced Metal-Insulator Transition in InSb and HgCdTe at Very Low Temperatures Solid State Communications 60, 817-820 (1986) M.Shayegan, V.J.Goldman, H.D.Drew, N.A.Fortune and J.S.Brooks
10. On Heat Capacity of Condensed Electron System in Dilute Metal n-HgCdTe Physical Review Letters 58, 428 (1987) M.Shayegan, V.J.Goldman and H.D.Drew
11. Transport in Double-Barrier Resonant Tunneling Structures Journal of Applied Physics (Rapid Communication) 61, 2693-2695 (1987) V.J.Goldman, D.C.Tsui, J.E.Cunningham and W.T.Tsang
12. Resonant Tunneling in Magnetic Fields: Evidence for
Space-Charge Buildup Physical
Review (Rapid Communication) B 35, 9387-9390 (1987)
V.J.Goldman, D.C.Tsui and J.E.Cunningham
13. Observation of Intrinsic Bistability In Resonant
Tunneling
Structures
Physical Review Letters 58,
1256-1259 (1987) V.J.Goldman, D.C.Tsui and J.E.Cunningham
14. On the Hall Resistivity of n-HgCdTe Solid State Communications 63, 575-576 (1987) H.D.Drew, V.J.Goldman and M.Shayegan
15. Experimental Search for Dynamic Current Oscillations in the Quantum Hall Effect Physics Letters A 123, 311-312 (1987) V.J.Goldman, S.E.Barret, D.C.Tsui and K.Alavi
16. Evidence for LO-Phonon-Emission Assisted Tunneling
in
Double Barrier Heterostructures Physical
Review B 36, 7635-7637 (1987) V.J.Goldman, D.C.Tsui
and J.E.Cunningham
17. Far-Infrared Transmission of High Tc Y-Ba-Cu-O Superconductors Solid State Communication 63, 525-529 (1987) T.H.H.Vuong, D.C.Tsui, V.J.Goldman, P.H.Hor, R.L.Meng and C.W.Chu
18. Charge Transport and Intrinsic Bistability in Resonant Tunneling Structures Journal de Physique (Paris) C 5, 463-466 (1987) V.J.Goldman, D.C.Tsui and J.E.Cunningham
19. Reply to Comment by T.C.L.G. Sollner
Physical
Review Letters 59, 1623 (1987) V.J.Goldman,
D.C.Tsui and J.E.Cunningham
20. Growth of Low-Density Two-Dimensional Electron System with Very High Mobility by Molecular Beam Epitaxy Applied Physics Letters 52, 1086-1088 (1988) M.Shayegan, V.J.Goldman, C.Jiang, T.Sajoto and M.Santos
21. Magnetic-Field-Induced Localization in InSb and HgCdTe
Physical
Review B 38, 5585-5602 (1988) M.Shayegan, V.J.Goldman
and H.D.Drew
22. Breakdown of Coherence in Resonant Tunneling through Double-Barrier Heterostructures Solid State Electronics 31, 731-734 (1988) V.J.Goldman, D.C.Tsui and J.E.Cunningham
23. Magnetic-Field-Induced Localization in n-HgCdTe: Mott-Anderson Transition or Wigner Crystallization? Proc. 19th Intl. Conf. Phys. Semicond. (1988), Institute of Physics, pp. 1205-1208 M.Shayegan, V.J.Goldman and H.D.Drew
24. Quantum Magnetotransport in Low-Density Two-Dimensional Electron Systems Proc. 19th Intl. Conf. Phys. Semicond. (1988), Institute of Physics (Poland), pp. 159-162 V.J.Goldman, D.C.Tsui and M.Shayegan
25. Evidence for the Fractional Quantum Hall State at ν = 1/7
Physical
Review Letters 61, 881-884 (1988)
V.J.Goldman, M.Shayegan and D.C.Tsui
26. Resonant Tunneling and Intrinsic Bistability in
Asymmetric
Double-Barrier Heterostructures Applied
Physics Letters 53, 1408-1410 (1988) A.Zaslavsky,
V.J.Goldman, D.C.Tsui and J.E.Cunningham
27. Two-Dimensional Electron Systems with Extremely Low Disorder Applied Physics Letters 53, 2080-2082 (1988) M.Shayegan, V.J.Goldman, M.Santos, T.Sajoto, L.Engel and D.C.Tsui
28. MBE Growth of Two-Dimensional Electron Systems with Extremely Low Disorder Journal of Crystal Growth 95, 250-252 (1989) M.Shayegan, V.J.Goldman, T.Sajoto, C.Jiang and H.Ito
29. Magnetospectroscopy in HgCdTe: Shallow Donors and Localization " Shallow Impurities in Semiconductors", Inst. Phys. Conf. Ser. 95, 341-350 (1989) V.J.Goldman, M.Shayegan, H.D.Drew and J.B.Choi
30. MBE Growth of High Quality Two-Dimensional Electron Systems Journal of Vacuum Science and Technology B 7, 388 (1989) M.Shayegan, V.J.Goldman, L.W.Engel, M.Santos, Y.W.Suen and T.Sajoto
31. Fractional Quantum Hall States at ν
= 7/11 and 9/13 Surface Science 229,
10-12 (1990) V.J.Goldman and M.Shayegan
32. Evidence for Two-Dimensional Quantum Wigner Crystal
Physical
Review Letters 65, 2189-2192 (1990)
V.J.Goldman, M.Santos, M.Shayegan and J.E.Cunningham
33. Dependence of the Fractional Quantum Hall Effect Energy Gap on Electron Layer Thickness Proc. Intl. Conf. Applications of High Magnetic Field in Semicond. Phys. (Wurzburg, 1990) J.Jo, Y.W.Suen, M.Santos, M.Shayegan and V.J.Goldman
34. Nature of the Extended States in the Fractional
Quantum
Hall Effect Physical Review Letters 65,
907-910 (1990) V.J.Goldman, J.K.Jain and M.Shayegan
35. Resonant Tunneling from an Accumulation Layer: New Spectroscopy of Two-Dimensional Electron Systems " Resonant Tunneling in Semiconductors" (1990), Plenum, New York, pp. 431-440 V.J.Goldman, B.Su and J.E.Cunningham
36. Evidence for Two-Dimensional Quantum Wigner Crystal Proc. 20th Intl. Conf. Phys. Semicond. (1990), World Scientific, pp. 813-820 V.J.Goldman, J.E.Cunningham, M.Shayegan and M.Santos
37. Collapse of the Fractional Quantum Hall Effect in an Electron System with Large Layer Thickness Proc. 20th Intl. Conf. Phys. Semicond. (1990), World Scientific, pp. 845-848 J.Jo, Y.W.Suen, M.Santos, M.Shayegan and V.J.Goldman
38. Collapse of the Fractional Quantum Hall Effect in
an
Electron System with Large Layer Thickness
Physical Review Letters 65,
2916-2919 (1990) M.Shayegan, J.Jo, Y.W.Suen, M.Santos and V.J.Goldman
39. Resonant Tunneling in Submicron Double-Barrier
Heterostructures Applied
Physics Letters 58, 747-749 (1991) B.Su, V.J.Goldman,
M.Santos and M.Shayegan
40. Transitions between Fractional Quantum Hall States (Invited Review) Modern Physics Letters B 5, 479-490 (1991) V.J.Goldman, J.K.Jain and M.Shayegan
41. Edge States in the Fractional Quantum Hall Effect
Physical
Review Letters 67, 749-752 (1991) J.K.Wang
and V.J.Goldman
42. Single-Electron Resonant Tunneling through Quantum Dots " Nanostructures and Mesoscopic Systems" Academic Press, 1991, pp. 173-182 V.J.Goldman, B.Su and J.E.Cunningham
43. Experimental Evidence for Two-Dimensional Quantum Wigner Crystal (Invited Review) Modern Physics Letters B 5, 1109-1119 (1991) V.J.Goldman
44. On the Possibility of Infrared Laser in a Resonant Tunneling Structure Applied Physics Letters 59, 2636-2638 (1991) A.Kastalsky, V.J.Goldman and J.H.Abeles
45. Nonlocal Resistance and Edge Currents in the Fractional Quantum Hall Regime Modern Physics Letters B 5, 1617-1624 (1991) J.K.Wang and V.J.Goldman
46. Hierarchy of States in the Fractional Quantum Hall
Effect
Physical
Review B 45, 1255-1258 (1992) J.K.Jain and
V.J.Goldman
47. Observation of Single-Electron Charging in
Double-Barrier
Heterostructures Science 255,
313-315 (1992) B.Su, V.J.Goldman and J.E.Cunningham
48. Measurements and Modeling of Nonlocal Resistance in
the
Fractional Quantum Hall Regime Physical
Review B 45, 13479-13487 (1992) J.K.Wang and
V.J.Goldman
49. Single-Electron Tunneling in Nanometer
Double-Barrier
Heterostructure Devices Physical
Review B 46, 7644-7655 (1992) B.Su, V.J.Goldman and
J.E.Cunningham
50. Single-Electron Tunneling in Double-Barrier Nanostructures (Invited Review) International Journal of Modern Physics B 6, 2321-2343 (1992) V.J.Goldman, B.Su and J.E.Cunningham
51. Single-Electron Tunneling in Double-Barrier Nanostructures Superlattices and Microstructures 12, 305-312 (1992) B.Su, V.J.Goldman and J.E.Cunningham
52. Edge-State Conduction in the Fractional Quantum Hall Effect Proc. 21st Intl. Conf. Phys. Semicond. (1992), World Scientific, pp. 927-930 J.K.Wang and V.J.Goldman
53. Single-Electron Tunneling in Double-Barrier Nanostructures (Plenary paper) Proc. 21st Intl. Conf. Phys. Semicond. (1992), World Scientific, pp. 11-18 V.J.Goldman, B.Su and J.E.Cunningham
54. Peak-to-Valley Ratio of 130:1 in AlGaAs/GaAs/AlGaAs Structures Journal of Crystal Growth 127, 695-699 (1993) J.E.Cunningham, V.J.Goldman, B.Su and W.Y.Jan
55. Universality of the Hall Effect in a
Magnetic-Field-Localized Two-Dimensional Electron System Physical
Review Letters 70, 647-650 (1993) V.J.Goldman,
J.K.Wang, B.Su and M.Shayegan
56. Hall Effect in a Magnetic-Field-Localized
Two-Dimensional
Electron System Physical
Review B 47, 10548-10554 (1993) V.J.Goldman, B.Su, and
J.K.Wang
57. Evidence for Spin Singlet-Triplet Transitions of Two Electrons in a Quantum Dot Observed via Single-Electron Tunneling Surface Science 305, 566-570 (1994) B.Su, V.J.Goldman and J.E.Cunningham
58. Transport Properties of the Two-Dimensional Wigner Crystal (book chapter) "Physics of Quantum Electron Solids", ed. S.T.Chui, International Press, 1994, pp. 97-124 V.J.Goldman
59. Detection of Composite Fermions by Magnetic Focusing
Physical
Review Letters 72, 2065-2068 (1994)
V.J.Goldman, B.Su and J.K.Jain
60. Resonant Tunneling in Quantum Hall Effect:
Measurement of
Fractional Charge Science 267,
1010-1012 (1995) V.J.Goldman and B.Su
61. Peak Values of Conductivity in the Integer and
Fractional
Quantum Hall Effect Solid State Communications 96,
309-313 (1995) L.P.Rokhinson, B.Su and V.J.Goldman
62. Logarithmic Temperature Dependence of Conductivity
at
Half-Integer Filling: Evidence for Interaction between Composite
Fermions Physical
Review (Rapid Communication) B 52, R11588-11590
(1995) L.P.Rokhinson, B.Su and V.J.Goldman
63. Resonant Tunneling in Quantum Hall Effect: Measurement of Fractional Charge Surface Science 362, 1-6 (1996) V.J.Goldman
64. Resonant Tunneling in Quantum Hall Effect: Measurement of Fractional Charge Proc. 6th Intl. Conf. Hopping and Related Phenomena, Racah Inst., 1995, 337-346 V.J.Goldman
65. Magnetoresistance of Composite Fermions at ν = 1/2 Proc. Intl. Conf. Localization and Quantum Transport, Inst. Physics (Poland), 1996, p. 37 L.P.Rokhinson and V.J.Goldman
66. Lineshape of Resonant Tunneling between Fractional
Quantum
Hall Edges Physical Review B 55, 4081-4084 (1997)
I.J.Maasilta and V.J.Goldman
67. Magnetoresistance of Composite Fermions near ν = 1/2 Physical Review (Rapid Communication) B 56, R1672-1676 (1997) L.P.Rokhinson and V.J.Goldman.
68. Comment on cond-mat/97063007 and cond-mat/9707289 V.J.Goldman, cond-mat/9708041
69. Quantum Antidot as an Electrometer: Observation of Fractional Charge (Invited Review) Physica E 1, 15-20 (1997) V.J.Goldman
70. Energetics of Quantum Antidot States in Quantum Hall
Regime
Physical Review (Rapid Communication) B
57, R4273-4276 (1998) I.J.Maasilta and V.J.Goldman
71. Tunneling Spectroscopy of Quantum Hall Edges Proc. 24th Intl. Conf. Phys. Semicond. (1998) I.J.Maasilta and V.J.Goldman
72. On Anisotropic Transport in High Landau Levels V.J.Goldman, cond-mat/9905237
73. Quantum Hall Effect Today (Invited Review)
Physica B 280, 372-377 (2000) V.J.Goldman
74. Tunneling through an 'Impurity Molecule' in Quantum Hall Regime Physica B 284, 1722-1723 (2000) I.J.Maasilta and V.J.Goldman
75. Tunneling through a Coherent Quantum Antidot
'Molecule'
Physical Review Letters 84,
1776-1779 (2000) I.J.Maasilta and V.J.Goldman
76. Quantum Hall Effect in Periodically Modulated Magnetic Field Proc. 25th Intl. Conf. Phys. Semicond. (2001) A.Tsukernik, A.Palevski, V.J.Goldman, S.Luryi, A.Rudra, and E.Kapon
77. Magnetotransport in Mesoscopic Carbon Networks
Physica
B 294-295, 319-323 (2001) V.A.Samuilov,
J.Galibert, V.Ksenevich, V.J.Goldman, M.Rafailovich, J.Sokolov, and
V.A.Dorosinets
78. Invariance of Charge of Laughlin Quasiparticles
Physical Review B 64,
085319-1-5 (2001) V.J.Goldman, I.Karakurt, J.Liu, and A.Zaslavsky
79. The Quantum Antidot Electrometer: Direct Observation
of
Fractional Charge (Invited)
J.
Korean Physical Society 39, 512-518 (2001)
V.J.Goldman
80. Quantum Magnetotransport in Periodic V-grooved
Heterojunctions
Physical Review B 63, 153315, 1-4 (2001) A.Tsukernik,
A.Palevski, V.J.Goldman, S.Luryi, E.Kapon, and A.Rudra
81. Formation of an Edge Striped Phase in Fractional
Quantum
Hall Systems
Physical Review B 64, 165311, 1-5 (2001) E.V.Tsiper
and V.J.Goldman
82. Dependence of the Fractional Quantum Hall Edge
Critical
Exponent on the Range of Interaction
Physical
Review Letters 86, 5841 (2001) V.J.Goldman
and E.V.Tsiper
83. Coherent Control of Fractional Charges in Quantum Antidot Devices (Invited) in "XXXVI Rencontres de Moriond", pp. 51-58 (EDP Sciences, 2001) V.J.Goldman
84. Quantum Computation with FQHE Quasiparticles in "XXXVI Rencontres de Moriond", pp. 551-556 (EDP Sciences, 2001) D.V.Averin and V.J.Goldman
85. Absence of Compressible Edge Channel Rings in
Quantum
Antidots Physical Review Letters 87,
146801, 1-4 (2001) I.Karakurt, V.J.Goldman, J.Liu, and A.Zaslavsky
86. Quantum Computation with FQHE Quasiparticles in "Future Trends in Microelectronics: The Nano Millennium", ed. S. Luryi et al., pp. 334-340 (Wiley-Interscience, 2002) D.V.Averin and V.J.Goldman
87. Quantum Computation with Quasiparticles of the Fractional Quantum Hall Effect Solid State Communications 121, 25-28 (2002) D.V.Averin and V.J.Goldman
88. Role of Spin Polarization on Quantum Hall Effect in
2DEG
with Periodically Modulated filling factor
Physica
E 12, 136-139 (2002) A.Tsukernik,
M.Karpovski, A. Palevski, V.J.Goldman, S.Luryi, A.Rudra, and E.Kapon
89. Fractional
statistics
of Laughlin quasiparticles in quantum antidots
Phys. Rev. B 71, 153303
(2005) V.J.Goldman, J.Liu, and A.Zaslavsky
90. Realization of a Laughlin quasiparticle
interferometer:
Observation of fractional statistics
Phys. Rev. B 72, 075342 (2005) F. E. Camino, Wei Zhou and V. J.
Goldman
91. Aharonov-Bohm electron interferometer in the integer
quantum Hall regime Phys. Rev. B 72, 155313 (2005) F. E. Camino,
Wei Zhou and V. J. Goldman
92. Aharonov-Bohm superperiod in a Laughlin
quasiparticle
interferometer Phys. Rev. Lett. 95, 246802
(2005) F. E. Camino, Wei Zhou and V. J. Goldman
93. Flux period scaling in the Laughlin quasiparticle
interferometer Phys. Rev. B 73, 245322
(2006) Wei Zhou, F. E. Camino and V. J. Goldman
94. Transport in the Laughlin quasiparticle
interferometer:
Evidence for topological protection in an anyonic qubit Phys. Rev. B 74, 115301 (2006) F. E. Camino,
Wei Zhou and V. J. Goldman
95. Superperiods and quantum statistics of Laughlin
quasiparticles Phys. Rev. B 75, 045334
(2007) V. J. Goldman
96. e/3 Laughlin Quasiparticle Primary-Filling v=1/3
Interferometer Phys. Rev. Lett. 98, 076805
(2007) F. E. Camino, Wei Zhou and V. J. Goldman
97. Quantum transport in electron Fabry-Perot
interferometers
Phys.
Rev. B 76, 155305 (2007) F. E. Camino,
Wei Zhou and V. J. Goldman
98. Fractional quantum
Hall
effect: A game of five halves
Nature
Phys.
3, 517
(2007) V. J. Goldman
99. Electron tunneling
spectroscopy of quantum
antidots in the
Integer Quantum Hall Regime Phys. Rev.
B 77, 115328 (2008) V.J.Goldman,
J.Liu, and A.Zaslavsky
100. Experimental realization of Laughlin quasiparticle
interferometers (Invited
Review) Physica E 40, 949-953 (2008) F. E. Camino,
Wei Zhou and V. J.
Goldman
101. Low-field quantum
Hall transport in an electron Fabry-Perot interferometer: Dependence of
constriction filling on front-gate voltage
Phys.
Rev. B 78, 245322
(2008) Ping V. Lin, F. E. Camino and V. J.
Goldman
102. Electron
interferometry in the quantum Hall regime: Aharonov-Bohm effect of
interacting electrons Phys. Rev. B 80, 125310 (2009) Ping V. Lin, F. E. Camino,
and V. J. Goldman
